Ultrahigh-performance 8-GHz SiGe power HBT

Author

Guogong Wang ; Hao-Chih Yuan ; Zhenqiang Ma

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Wisconsin, Madison, WI, USA

Volume

27

Issue

5

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

371

Lastpage

373

Abstract

This letter has demonstrated the state-of-the-art SiGe power heterojunction bipolar transistors (HBTs) operating at 8 GHz. In a common-base configuration, a continuous wave output power of 27.72 dBm with a concurrent power gain of 12.19 dB was measured at a peak power-added efficiency of 60.6% from a single SiGe HBT with a 3-μm emitter finger stripe width and a 1340 μm² total emitter area. The highest power-performance figure of merit (FOM) of 3.8×10⁵ mW/spl middot/GHz² achieved from the device was resulted from using an optimized SiGe heterostructure and a compact device layout, which is made possible with a heavily doped base region.

Keywords

heterojunction bipolar transistors; microwave bipolar transistors; power bipolar transistors; semiconductor doping; 12.19 dB; 3 micron; 8 GHz; SiGe; heterojunction bipolar transistors; power HBT; semiconductor doping; Doping profiles; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Niobium; Power generation; Proximity effect; Radio frequency; Silicon germanium; Thermal degradation; Common–base (CB); SiGe; heterojunction bipolar transistors (HBTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.873766

Filename

1626460