DocumentCode
924749
Title
New structures for charge-coupled devices
Author
Schuermeyer, F.L. ; Young, C.R.
Volume
60
Issue
11
fYear
1972
Firstpage
1444
Lastpage
1445
Abstract
The buried-channel concept in charge-coupled devices (CCD´s) is extended to new CCD structures which have no oxide interfaces. The advantages of such devices for technical applications are presented.
Keywords
Acoustical engineering; Charge coupled devices; Electrodes; Electron mobility; Leakage current; MOS capacitors; Schottky barriers; Semiconductor device doping; Semiconductor device noise; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1972.8922
Filename
1450852
Link To Document