• DocumentCode
    924783
  • Title

    Optimisation of depletion-mode transistors for an m.o.s. p-channel technology

  • Author

    Schemmert, W. ; H¿¿fflinger, B.

  • Author_Institution
    Universitÿt Dortmund, Lehrstuhl Bauelemente der Elektrotechnik, Dortmund, West Germany
  • Volume
    9
  • Issue
    23
  • fYear
    1973
  • Firstpage
    555
  • Lastpage
    556
  • Abstract
    Recent advances in p-channel m.o.s. integrated circuits are the result of using depletion-mode load transistors which provide currents proportional to the square of their threshold voltage. Using ion implantation, limits are set to the maximum obtainable threshold voltage depending on the implantation parameters. Their systematic investigation is reported and the resulting optimum parameters for threshold voltage shifts exceeding 6 V are given.
  • Keywords
    field effect transistors; integrated circuit production; ion implantation; MOS; depletion mode; field effect transistors; integrated circuit production; ion implantation; optimisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730408
  • Filename
    4236363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=924783