Title :
Ambient-temperature effects in transferred-electron amplifiers
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
The effect of ambient temperature on the gain and centre frequency of transferred-electron reflection amplifiers is reported for devices with n+ or metal-alloy cathode contacts. The dependence of the centre frequency on temperature was much stronger than predicted theoretically, and, contrary to expectation, similar performance was obtained from both types of diode.
Keywords :
microwave amplifiers; solid-state microwave devices; transferred electron devices; ambient temperature effect; microwave amplifiers; solid state microwave circuits; transferred electron devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730412
