DocumentCode :
924871
Title :
Effect of circuit load on the phase of bias tuning in transferred-electron devices
Author :
Tang, D. ; Lomax, R.J. ; Haddad, G.I.
Author_Institution :
University of Michigan, Electron Physics Laboratory Department of Electrical & Computer Engineering, Ann Arbor., USA
Volume :
9
Issue :
24
fYear :
1973
Firstpage :
564
Lastpage :
565
Abstract :
The phase (sign) of the bias tuning of a transferred-electron device is found to be affected by the circuit load. A high-nl device tends to show positive tuning and a low-nl device tends to show negative tuning. The frequency of operation also affects the voltage at which the device starts to change its tuning phase from positive to negative.
Keywords :
transferred electron devices; tuning; circuit load; transferred electron device; tuning;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19730415
Filename :
4236371
Link To Document :
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