Title :
Punchthrough currents in short-channel m.o.s.t. devices
Author :
Stuart, R.A. ; Eccleston, W.
Author_Institution :
University of Liverpool, Department of Electrical Engineering & Electronics, Liverpool, UK
Abstract :
Measurements have been performed on the source-leakage currents associated with short-channel m.o.s.t. devices. Both space-charge-limited and non-space-charge-limited punchthrough currents have been observed as a function of gate and drain voltages, and physical mechanisms describing these currents are briefly discussed.
Keywords :
field effect transistors; leakage currents; space-charge-limited conduction; punchthrough currents; short channel MOST devices; source leakage currents; space charge limited currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730434
