• DocumentCode
    925101
  • Title

    V.M.O.S. conductively coupled charge-coupled device

  • Author

    Parks, C.M. ; Salama, C.A.T.

  • Author_Institution
    University of Toronto, Department of Electrical Engineering, Toronto, Canada
  • Volume
    9
  • Issue
    25
  • fYear
    1973
  • Firstpage
    593
  • Lastpage
    594
  • Abstract
    A new conductively coupled stepped-oxide 2-phase charge-coupled-device structure is proposed, fabricated and tested. The structure has a narrow automatically produced oxide barrier, and allows increased packing density for charge-coupled-device arrays.
  • Keywords
    charge-coupled devices; semiconductor device manufacture; VMOS charge coupled device; conductive coupling;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730439
  • Filename
    4236396
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=925101