Title :
Numerical calculation of the ideal c/v characteristics of nonuniformly doped m.o.s. capacitors
Author :
El-Sissi, H. ; Cobbold, Richard S. C.
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
Abstract :
A new and highly efficient method for calculating the ideal C/V characteristics of nonuniformly doped m.o.s. capacitors is described. Compared with previously described procedures, this method decreases the computation time by more than an order of magnitude. Results for an ion-implanted Gaussian profile are presented.
Keywords :
capacitance; electronics applications of computers; metal-insulator-semiconductor structures; numerical methods; ideal CV characteristics; nonuniformly doped MOS structures; numerical calculation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730440
