DocumentCode
925145
Title
Practical 2-dimensional bipolar-transistor-analysis algorithm
Author
Zaluska, E.J. ; Dubock, P.A. ; Kemhadjian, H.A.
Author_Institution
University of Southampton, Department of Electronics, Southampton, UK
Volume
9
Issue
25
fYear
1973
Firstpage
599
Lastpage
600
Abstract
Extensions to a 2-dimensional bipolar-transistor-modelling algorithm are described. They enable practical high-frequency silicon devices to be analysed in a time appreciably shorter than previously reported schemes. This allows device properties to be economically explored over a wide range of bias currents and voltages.
Keywords
bipolar transistors; computer aided analysis; electronics applications of computers; semiconductor device models; bipolar transistors; two dimensional analysis algorithm;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730443
Filename
4236400
Link To Document