Title :
Effect of doping profile on avalanche noise of silicon IMPATT diodes
Author_Institution :
Technische Universitÿt Mÿnchen, Institut fÿr Technische Elektronik, Mÿnchen, West Germany
Abstract :
The open-circuit spectral noise-voltage density e2/¿f of silicon IMPATT diodes with different punchthrough factors has been measured. A noise reduction has been obtained for diodes with punchthrough factors > 1. This is in agreement with theoretical curves calculated on the basis of the noise theory of Gummel and Blue.
Keywords :
IMPATT diodes; noise; semiconductor doping; Si IMPATT diode; avalanche noise; doping profile effects; punchthrough factors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730445
