Title :
Impact-ionization effects on the high-frequency behavior of HFETs
Author :
Isler, Mark ; Schünemann, Klaus
Author_Institution :
Dept. of Microwave Eng., Tech. Univ. Hamburg-Harburg, Hamburg, Germany
fDate :
3/1/2004 12:00:00 AM
Abstract :
A new small-signal equivalent-circuit model is presented, which takes into account strong impact-ionization effects on the high-frequency behavior of heterostructure field-effect transistors (HFET). The proposed model overcomes the limitations of previous models and includes the bipolar action of the space charge of holes generated by impact ionization. It is shown that the developed model is capable of explaining the anomalous high-frequency behavior of HFETs with channels of high indium content.
Keywords :
S-parameters; equivalent circuits; impact ionisation; junction gate field effect transistors; microwave field effect transistors; semiconductor device breakdown; semiconductor device models; space charge; anomalous behavior; heterostructure field-effect transistors; high indium content channels; high-frequency behavior; microwave performance; small-signal equivalent-circuit model; space charge bipolar action; strong impact-ionization effects; Charge carrier processes; Circuits; HEMTs; Impact ionization; Indium; MODFETs; Microwave devices; Shape; Space charge; Threshold voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2004.823553
