Abstract :
A group of researchers from the Texas-based company, Freescale Semiconductor Inc., has fabricated metal oxide semiconductor field-effect transistors (MOSFET) using gallium arsenide and a novel gate dielectric. If the group can overcome some significant manufacturing challenges, this innovation could lead to a cellphone-on-a-chip and instant analog-to-digital conversion. It may even enable chip makers to improve processor speed and performance when transistors on silicon chips can be miniaturized no further.
Keywords :
III-V semiconductors; MOSFET; analogue-digital conversion; cellular radio; gallium arsenide; monolithic integrated circuits; Freescale Semiconductor Inc; MOSFET; analog-to-digital conversion; cellphone-on-a-chip; gallium arsenide; gate dielectric; metal oxide semiconductor field-effect transistors; multimedia handsets; Cellular phones; Deuterium; Dielectrics; FETs; Gallium arsenide; Hafnium; MOSFET circuits; Silicon; Telephone sets; Voltage;
