High-Characteristic-Temperature 1.3-μm-Band Laser on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method

Author

Arai, Masakazu ; Watanabe, Takao ; Yuda, Masahiro ; Kinoshita, Kyoichi ; Yoda, Shinichi ; Kondo, Yasuhiro

Author_Institution

NTT Corp., Kanagawa

Volume

13

Issue

5

fYear

2007

Firstpage

1295

Lastpage

1301

Abstract

We have developed high-performance 1.3-mum-band laser diodes on an InGaAs ternary substrate with a low indium content (In:0.1) grown by a novel bulk crystal growth technique called the traveling liquidus-zone (TLZ) method. This laser has a long-wavelength lasing of 1.28 mum and provides lasing operation up to 195degC by using a highly strained InGaAs quantum well. The characteristic temperatures are 130 K from 25 to 95degC and 95 K from 95 to 155degC. We investigated junction heating by comparing the lasing wavelengths for pulsed and continuous-wave (CW) operation. And, we showed the possibility of realizing a high-performance laser on an InGaAs ternary substrate.

Keywords

III-V semiconductors; crystal growth from solution; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; InGaAs - Interface; bulk crystal growth; liquidus-zone method; quantum well lasers; semiconductor growth; temperature 130 K; temperature 25 degC to 95 degC; temperature 95 K; temperature 95 degC to 155 degC; ternary substrate; wavelength 1.28 mum; wavelength 1.3 mum; Conducting materials; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Quantum dot lasers; Quantum well devices; Quantum well lasers; Substrates; Temperature sensors; Thermal conductivity; High characteristic temperature; InGaAs ternary substrate; laser;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2007.903850

Filename

4346457