DocumentCode :
925461
Title :
Low-voltage temperature sensor for micro-power harvesters in silicon-on-sapphire CMOS
Author :
Kaya, T. ; Koser, H. ; Culurciello, E.
Author_Institution :
Dept. of Electron. & Commun. Eng., Istanbul Tech. Univ., Turkey
Volume :
42
Issue :
9
fYear :
2006
fDate :
4/27/2006 12:00:00 AM
Firstpage :
526
Lastpage :
528
Abstract :
A low-voltage temperature sensor designed for MEMS power harvesting systems is fabricated. The core of the sensor is a bandgap voltage reference circuit operating with a supply voltage in the range 1-1.5 V. The prototype was fabricated on a conventional 0.5 μm silicon-on-sapphire (SOS) process. The sensor design consumes 15 μA of current at 1 V. The internal reference voltage is 550 mV. The temperature sensor has a digital square wave output the frequency of which is proportional to temperature. A linear model of the dependency of output frequency with temperature has a conversion factor of 1.6 kHz/°C. The output is also independent of supply voltage in the range 1-1.5 V. Measured results and targeted applications for the proposed circuit are reported.
Keywords :
CMOS integrated circuits; electric sensing devices; low-power electronics; microsensors; reference circuits; sapphire; silicon; temperature sensors; 0.5 micron; 1 to 1.5 V; 15 muA; 550 mV; MEMS power harvesting systems; SOS process; Si-Al2O3; bandgap voltage reference circuit; digital square wave output; internal reference voltage; linear model; low-voltage temperature sensor; micro-power harvesters; silicon-on-sapphire CMOS; silicon-on-sapphire process;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20060867
Filename :
1628529
Link To Document :
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