Low-voltage temperature sensor for micro-power harvesters in silicon-on-sapphire CMOS

Author

Kaya, T. ; Koser, H. ; Culurciello, E.

Author_Institution

Dept. of Electron. & Commun. Eng., Istanbul Tech. Univ., Turkey

Volume

42

Issue

9

fYear

2006

fDate

4/27/2006 12:00:00 AM

Firstpage

526

Lastpage

528

Abstract

A low-voltage temperature sensor designed for MEMS power harvesting systems is fabricated. The core of the sensor is a bandgap voltage reference circuit operating with a supply voltage in the range 1-1.5 V. The prototype was fabricated on a conventional 0.5 μm silicon-on-sapphire (SOS) process. The sensor design consumes 15 μA of current at 1 V. The internal reference voltage is 550 mV. The temperature sensor has a digital square wave output the frequency of which is proportional to temperature. A linear model of the dependency of output frequency with temperature has a conversion factor of 1.6 kHz/°C. The output is also independent of supply voltage in the range 1-1.5 V. Measured results and targeted applications for the proposed circuit are reported.

Keywords

CMOS integrated circuits; electric sensing devices; low-power electronics; microsensors; reference circuits; sapphire; silicon; temperature sensors; 0.5 micron; 1 to 1.5 V; 15 muA; 550 mV; MEMS power harvesting systems; SOS process; Si-Al₂O₃; bandgap voltage reference circuit; digital square wave output; internal reference voltage; linear model; low-voltage temperature sensor; micro-power harvesters; silicon-on-sapphire CMOS; silicon-on-sapphire process;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20060867

Filename

1628529