Title :
wo-dimensional finite element simulation of semiconductor devices
Author :
Barnes, J.J. ; Lomax, R.J.
Author_Institution :
University of Michigan, Electron Physics Laboratory Department of Electrical & Computer Engineering, Ann Arbor, USA
Abstract :
Semiconductor-device modelling in two dimensions by the finite-element method is described. Results of application to a GaAs m.e.s.f.e.t. are given. Negative differential drain conductance is observed.
Keywords :
field effect transistors; finite element analysis; semiconductor device models; field effect transistors; finite element analysis; negative differential drain conductance; semiconductor device models; semiconductor devices; simulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740270
