Title :
GaAs-GaAlAs anti-Stokes light convertor
Author :
Beneking, H. ; Schul, H. ; Mischel, G. ; Schul, G. ; Gattung, A.
Author_Institution :
RWTH Aachen, Institut fÿr Halbleitertechnik, Aachen, West Germany
Abstract :
A multilayer heterojunction device has been manufactured and used for efficient anti-Stokes light conversion. The device consists of six layers: p GaAs, n GaAs, n GaxAl1¿xAs, p GayAl1¿yAs, p GaxAl1¿xAs and p GaAs, essentially forming a GaAs photodiode coupled with a GaAlAs l.e.d. Avalanche multiplication of photoexcited carriers is used to increase the l.e.d. driving current.
Keywords :
III-V semiconductors; convertors; gallium arsenide; light emitting diodes; optoelectronic devices; p-n heterojunctions; photodiodes; avalanche multiplication; convertors; light emitting diodes; optoelectronic devices; p-n heterojunctions; photodiodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740273
