Microwave Measurement of Conductivity and Permittivity of Semiconductor Spheres by Cavity Perturbation Technique

Simple analytical relations for evaluating the components of complex relative permittivity of semiconductors using a cavity perturbation technique for spherical samples are presented. The relations although derived under a simplifying approximation yield remits of almost the same accuracy obtained by computer solutions of a transcendental equation for samples with resistivity up to about 1Omega-cm.