Title :
Energy transport numerical simulation of graded AlGaAs/GaAs heterojunction bipolar transistors
Author :
Azoff, Ettan Michael
Author_Institution :
Rutherford Appleton Lab., Chilton, UK
fDate :
4/1/1989 12:00:00 AM
Abstract :
The semiclassical high-field hydrodynamic transport equations, comprising the first three moments of the Boltzmann transport equation in the relaxation time approximation, are used to model the AlGaAs/GaAs heterojunction bipolar transistor. The transport equations are solved simultaneously in one dimension and in the steady state within a single-valley band-structure scheme. The device characteristics of graded Al profiles in the emitter-base and base regions are numerically evaluated
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; AlGaAs-GaAs; Boltzmann transport equation; base regions; device characteristics; emitter-base regions; heterojunction bipolar transistors; relaxation time approximation; semiclassical high-field hydrodynamic transport equations; single-valley band-structure scheme; Current density; Cutoff frequency; Effective mass; Electrons; Equations; Gallium arsenide; Heterojunction bipolar transistors; Numerical simulation; Radiative recombination; Spontaneous emission;
Journal_Title :
Electron Devices, IEEE Transactions on
