Title :
New theory of internal Q switching in semiconductor lasers
Author :
Gr¿¿ndorfer, S. ; Adams, M.J. ; Thomas, B.
Author_Institution :
University College, Department of Applied Mathematics & Mathematical Physics, Cardiff, UK
Abstract :
By considering optical-confinement effects in semiconductor lasers, a new theory is presented of transient phenomena in these devices. It is shown that a partial loss of confinement at high injection levels, when combined with the effects of saturable absorption, can satisfactorily account for Q switching.
Keywords :
Q-switching; semiconductor lasers; high injection levels; internal Q-switching; optical confinement effects; partial loss of confinement; saturable absorption; semiconductor lasers; transient phenomena theory;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740281
