Title :
The effect of interface and alloy quality on the DC and RF performance of Ga0.47In0.53As-Al0.48In 0.52As HEMTs
Author :
Brown, A.S. ; Mishra, U.K. ; Rosenbaum, S.E.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
fDate :
4/1/1989 12:00:00 AM
Abstract :
Ga0.47In0.53As-Al0.48In0.52 As high-electron-mobility transistors (HEMTs) were fabricated in materials with varying degrees of alloy and interface disorder. The conductivities of the epitaxial layers are highest for material with the smallest amount of interface roughness and lowest for samples with poor-quality interfaces. The transconductances and unity current gain cutoff frequencies of the fabricated devices with 0.2-μm gates are similarly affected
Keywords :
aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; interface structure; 0.2 micron; Ga0.47In0.53As-Al0.48In0.52 As; RF performance; alloy quality; high-electron-mobility transistors; interface disorder; interface roughness; transconductances; unity current gain cutoff frequencies; Conducting materials; Cutoff frequency; Electron mobility; Epitaxial layers; Gallium alloys; Heterojunctions; Indium phosphide; Laboratories; Radio frequency; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
