DocumentCode :
925635
Title :
Monte-Carlo based simulation of surface light emission profiles from AlGaInP light emitting diodes
Author :
Kettle, J. ; Perks, R.M.
Author_Institution :
Multidisciplinary Nanotechnol. Centre, Swansea Univ., UK
Volume :
42
Issue :
9
fYear :
2006
fDate :
4/27/2006 12:00:00 AM
Firstpage :
553
Lastpage :
555
Abstract :
Light emission profiles from AlGaInP LEDs are compared with those obtained via Monte-Carlo simulation and a lossy transmission line model. Results show good agreement for devices with thin current spreading layers. However, for thicker layers, geometric effects dominate the output profile, resulting in discrepancies between experimental data and the transmission line model. The simulation of emission profiles confirms this discrepancy, caused by light escaping from below the p-contact.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; semiconductor device models; transmission line theory; AlGaInP; LED; Monte-Carlo simulation; light emitting diodes; lossy transmission line model; surface light emission profiles; thin current spreading layers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20060463
Filename :
1628547
Link To Document :
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