DocumentCode
925642
Title
High-performance Al0.15Ga0.85As/In0.53 Ga0.47As MSM photodetectors grown by OMCVD
Author
Hong, Won-Pyo ; Chang, Gee-Kung ; Bhat, Rajaram
Author_Institution
Bell Commun. Res., Red Bank, NJ, USA
Volume
36
Issue
4
fYear
1989
fDate
4/1/1989 12:00:00 AM
Firstpage
659
Lastpage
662
Abstract
High-performance In0.53Ga0.47As metal-semiconductor-metal photodetectors using a thin lattice-mismatched AlxGa1-xAs surface layer to enhance the Schottky-barrier height have been fabricated and characterized with 1.3-μm laser sources. The dark leakage currents were reduced by a factor of five times with Al0.15Ga0.85As, when compared with GaAs or lattice-matched In0.52Al0.48As. The extrinsic quantum efficiency of a detector with a 1.0-μm absorption region was measured to be 40%. Photocurrent measurement under various illumination powers showed a linear responsivity of 0.4 A/W, and no low-frequency gain was observed. Impulse measurements showed an FWHM (full width at half maximum) of about 60 ps with no appreciable diffusion tails
Keywords
CVD coatings; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; Al0.15Ga0.85As-In0.53Ga0.47 As; FWHM; MSM photodetectors; OMCVD; Schottky-barrier height; absorption region; dark leakage currents; diffusion tails; extrinsic quantum efficiency; illumination powers; laser sources; linear responsivity; metal-semiconductor-metal photodetectors; Absorption; Current measurement; Detectors; Gain measurement; Gallium arsenide; Leak detection; Leakage current; Photoconductivity; Photodetectors; Surface emitting lasers;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.22471
Filename
22471
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