Title :
Quantum-Dot Phase Modulator Operating at 1300 nm
Author :
Goulding, David ; Hegarty, Stephen P. ; Huyet, Guillaume
Author_Institution :
Tyndall Nat. Inst., Cork
Abstract :
We analyze the properties of InAs-GaAs quantum-dot semiconductor optical amplifiers operating around 1300 nm. Using radiofrequency current modulation and phase sensitive detection, we characterize the phase-amplitude coupling (alpha-factor) as a function of injection current density. We obtain values for a up to 39 when the ground state is heavily saturated, and demonstrate large-signal phase modulator operation of the device.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; optical modulation; phase modulation; quantum dot lasers; semiconductor optical amplifiers; InAs-GaAs; injection current density; phase sensitive detection; phase-amplitude coupling; quantum-dot phase modulator; radiofrequency current modulation; semiconductor optical amplifiers; wavelength 1300 nm; Atom lasers; Optical interferometry; Optical refraction; Phase modulation; Quantum dot lasers; Quantum dots; Semiconductor lasers; Semiconductor optical amplifiers; Solid lasers; Stationary state; Optical modulators; quantum dots (QDs); semiconductor lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2007.903832
