Quantum-Dot Phase Modulator Operating at 1300 nm

Author

Goulding, David ; Hegarty, Stephen P. ; Huyet, Guillaume

Author_Institution

Tyndall Nat. Inst., Cork

Volume

13

Issue

5

fYear

2007

Firstpage

1257

Lastpage

1260

Abstract

We analyze the properties of InAs-GaAs quantum-dot semiconductor optical amplifiers operating around 1300 nm. Using radiofrequency current modulation and phase sensitive detection, we characterize the phase-amplitude coupling (alpha-factor) as a function of injection current density. We obtain values for a up to 39 when the ground state is heavily saturated, and demonstrate large-signal phase modulator operation of the device.

Keywords

III-V semiconductors; current density; gallium arsenide; indium compounds; optical modulation; phase modulation; quantum dot lasers; semiconductor optical amplifiers; InAs-GaAs; injection current density; phase sensitive detection; phase-amplitude coupling; quantum-dot phase modulator; radiofrequency current modulation; semiconductor optical amplifiers; wavelength 1300 nm; Atom lasers; Optical interferometry; Optical refraction; Phase modulation; Quantum dot lasers; Quantum dots; Semiconductor lasers; Semiconductor optical amplifiers; Solid lasers; Stationary state; Optical modulators; quantum dots (QDs); semiconductor lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2007.903832

Filename

4346480