DocumentCode
925702
Title
Bias-dependent oscillations in 10 μm-long transferred-electron oscillators
Author
Grubin, H.L.
Author_Institution
United Aircraft Research Laboratories, East Hartford, USA
Volume
10
Issue
18
fYear
1974
Firstpage
371
Lastpage
372
Abstract
Computer simulations show that a transferred-electron oscillator sustaining X band circuit-controlled relaxation oscillations will, in the same circuit, but at higher bias levels, shift to a space-charge dominated oscillation, where the terminal voltage always exceeds threshold.
Keywords
computer-aided circuit analysis; microwave oscillators; simulation; solid-state microwave circuits; transferred electron devices; X-band; bulk effect devices; computer aided circuit analysis; microwave oscillators; simulation; solid state microwave circuits; transferred electron devices; transferred electron oscillators;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19740294
Filename
4236459
Link To Document