Title :
Bias-dependent oscillations in 10 μm-long transferred-electron oscillators
Author_Institution :
United Aircraft Research Laboratories, East Hartford, USA
Abstract :
Computer simulations show that a transferred-electron oscillator sustaining X band circuit-controlled relaxation oscillations will, in the same circuit, but at higher bias levels, shift to a space-charge dominated oscillation, where the terminal voltage always exceeds threshold.
Keywords :
computer-aided circuit analysis; microwave oscillators; simulation; solid-state microwave circuits; transferred electron devices; X-band; bulk effect devices; computer aided circuit analysis; microwave oscillators; simulation; solid state microwave circuits; transferred electron devices; transferred electron oscillators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740294
