Title :
Computer simulations of the large signal characteristics of supercritical GaAs transferred electron amplifiers
Author :
Jeppsson, Bert ; Jeppesen, Palle
Author_Institution :
Microwave Institute Foundation, Stockholm, Sweden
Abstract :
The large signal characteristics of supercritically doped n+-n-n+GaAs transferred electron amplifiers are investigated in computer simulations. Device admittance, reflection gain in a 50-Ω circuit, available net output power, and efficiency are presented as a function of mean-square voltage across the device. Good agreement with published experimental amplifier results [1] is demonstrated.
Keywords :
Computer simulation; Electrons; Gallium arsenide; Noise figure; Ohmic contacts; Power amplifiers; Radio frequency; Schottky barriers; Schottky diodes; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9018
