DocumentCode :
925710
Title :
New method for producing ideal metal-semiconductor ohmic contacts
Author :
Sebestyen, T. ; Hartnagel, H. ; Herron, L.H.
Author_Institution :
University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Merz Laboratories, Newcastle upon Tyne, UK
Volume :
10
Issue :
18
fYear :
1974
Firstpage :
372
Lastpage :
373
Abstract :
A new understanding of ohmic-contact alloying in terms of liquid-epitaxy processes has led to improved contact fabrication by using a slow alloying cycle with an As overpressure chamber. A conveniently wide range of As pressures is possible when Ga is deposited together with the other metals.
Keywords :
ohmic contacts; semiconductor-metal boundaries; As pressures; Ga; liquid epitaxy process; ohmic contacts; semiconductor metal boundaries; slow alloying cycle;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19740295
Filename :
4236460
Link To Document :
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