Title :
Study of the Si-SiO2interface state with the negative bias-heat treatment approach
Author :
Kobayashi, I. ; Nakahara, Mizuki ; Atsumi, M.
Author_Institution :
Fujitsu Limited, Kobe, Japan
Abstract :
It is found experimentally that the Si-SiO2interface states in some energy levels can decrease by the negative bias-heat treatment which, until now, has been recognized as a way of increasing the state density. Some consideration is given to this unexpected phenomenon.
Keywords :
Capacitance; Circuits; Dielectric devices; Diodes; Electrons; Frequency; Gunn devices; Power generation; Reflection; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9019
