Title :
Current/voltage relations in punchthrough transistors
Author :
Ward, P.J. ; Perkins, K.D.
Author_Institution :
Plessey Co., Allen Clark Research Centre, Towcester, UK
Abstract :
Observations of punchthrough in narrow-base (¿0.1 ¿m) n-p-n transistors are reported that do not conform to conventional theory. A general theory of punchthrough current/voltage relations is developed that explains the experimental results.
Keywords :
bipolar transistors; electric breakdown; bipolar transistors; current/voltage relations; electric breakdown; n-p-n transistors; punchthrough transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740296
