• DocumentCode
    925725
  • Title

    Resonant tunneling in double-barrier parabolic well structures

  • Author

    Neofotistos, George ; Guo, Hong ; Diff, Karim ; Gunton, James D.

  • Author_Institution
    Dept. of Phys., Temple Univ., Philadelphia, PA, USA
  • Volume
    36
  • Issue
    4
  • fYear
    1989
  • fDate
    4/1/1989 12:00:00 AM
  • Firstpage
    745
  • Lastpage
    749
  • Abstract
    The intrinsic time characteristics of a double-barrier parabolic well structure are studied numerically. One-dimensional structures with AlAs and AlGaAs barrier (and superlattice) material are investigated, and two models are considered: the actual microstructure (graded-superlattice) model and the parabolic-potential-well-model. Time-independent results such as quasi-energy levels and their widths are essentially the same for these two models. However, their time dependence has been found to be considerably different. Although the buildup times for these models are very close in magnitude, the onset of the exponential decay law for the resonant state in the parabolic potential well takes place in a very short time (after the electron density inside the well has reached its peak), thus allowing the time decay constant τd to be a good measure of the temporal decay
  • Keywords
    carrier density; semiconductor quantum wells; semiconductor superlattices; tunnelling; AlxGa1-xAs-GaAs; actual microstructure; buildup times; double-barrier parabolic well structures; electron density; exponential decay law; intrinsic time characteristics; parabolic-potential-well-model; quasi-energy levels; temporal decay; Electrons; Energy states; Gallium arsenide; Microstructure; Physics; Potential well; Resonance; Resonant tunneling devices; Schrodinger equation; Superlattices;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.22480
  • Filename
    22480