DocumentCode
925725
Title
Resonant tunneling in double-barrier parabolic well structures
Author
Neofotistos, George ; Guo, Hong ; Diff, Karim ; Gunton, James D.
Author_Institution
Dept. of Phys., Temple Univ., Philadelphia, PA, USA
Volume
36
Issue
4
fYear
1989
fDate
4/1/1989 12:00:00 AM
Firstpage
745
Lastpage
749
Abstract
The intrinsic time characteristics of a double-barrier parabolic well structure are studied numerically. One-dimensional structures with AlAs and AlGaAs barrier (and superlattice) material are investigated, and two models are considered: the actual microstructure (graded-superlattice) model and the parabolic-potential-well-model. Time-independent results such as quasi-energy levels and their widths are essentially the same for these two models. However, their time dependence has been found to be considerably different. Although the buildup times for these models are very close in magnitude, the onset of the exponential decay law for the resonant state in the parabolic potential well takes place in a very short time (after the electron density inside the well has reached its peak), thus allowing the time decay constant τd to be a good measure of the temporal decay
Keywords
carrier density; semiconductor quantum wells; semiconductor superlattices; tunnelling; AlxGa1-xAs-GaAs; actual microstructure; buildup times; double-barrier parabolic well structures; electron density; exponential decay law; intrinsic time characteristics; parabolic-potential-well-model; quasi-energy levels; temporal decay; Electrons; Energy states; Gallium arsenide; Microstructure; Physics; Potential well; Resonance; Resonant tunneling devices; Schrodinger equation; Superlattices;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.22480
Filename
22480
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