Title :
Ga0.47In0.53As enhancement- and depletion-mode MISFETs with very high transconductance
Author :
Splettstoser, J. ; Beneking, H.
Author_Institution :
Inst. of Semicond. Electron., Tech. Univ. of Aachen, West Germany
fDate :
4/1/1989 12:00:00 AM
Abstract :
GaInAs metal-insulator-semiconductor field-effect transistors (MISFETs) have been fabricated on metalorganic vapor-phase-epitaxy (MOVPE) grown GaInAs layers. Enhancement-type MISFETs exhibit very high transconductances of 300 and 250 mS/mm for gate lengths of 1.5 and 3 μm, respectively. The effective channel mobility is 5800 cm2 V-1 s-1. The saturation velocity is 3.5×107 cm/s. High-frequency measurements performed on 3- and 1.5-μm-gate-lengthdevices result in a current gain cutoff frequency of 6 and 14 GHz, respectively
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; insulated gate field effect transistors; semiconductor epitaxial layers; vapour phase epitaxial growth; 1.5 micron; 14 GHz; 3 micron; 6 GHz; GaInAs; channel mobility; current gain cutoff frequency; depletion-mode MISFETs; gate lengths; metalorganic vapor-phase-epitaxy; saturation velocity; transconductance; Current measurement; Epitaxial growth; Epitaxial layers; FETs; Frequency measurement; Gain measurement; MISFETs; Metal-insulator structures; Performance evaluation; Performance gain;
Journal_Title :
Electron Devices, IEEE Transactions on
