Title :
An analytical model for pinchoff voltage evaluation of ion-implanted GaAs MESFETs
Author :
Dutt, M.B. ; Nath, Ram ; Kumar, R. ; Sharma, B.L.
Author_Institution :
Solid State Phys. Lab., Delhi, India
fDate :
4/1/1989 12:00:00 AM
Abstract :
The authors describe an analytical model for accurate evaluation of pinchoff voltage and channel thickness of ion-implanted GaAs MESFETs (metal-semiconductor field-effect transistors). A method for calculating I-V characteristics is outlined that uses pinchoff voltage and channel thickness and takes into account the effects of capping, backgating and source and drain resistances. Both single- and multiple-implantation cases are discussed
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; I-V characteristics; analytical model; backgating; capping; channel thickness; ion-implanted GaAs MESFETs; multiple-implantation cases; pinchoff voltage evaluation; Analytical models; Buffer layers; Doping; Fabrication; Gallium arsenide; Intrusion detection; Ion implantation; MESFETs; Semiconductor process modeling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
