Title :
Effect of energy band distortions on D/μ in heavily doped n-type silicon
Author_Institution :
Dept. of Phys., IIT, New Delhi, India
fDate :
4/1/1989 12:00:00 AM
Abstract :
Calculations have shown that energy band distortions increase the magnitude of D/μ (diffusion/mobility ratio). In particular, taking band tails into account in a heavily doped material significantly changes the ratio. Therefore, any serious calculation of the transport coefficients in heavily doped materials must incorporate the effect of band tails
Keywords :
carrier mobility; elemental semiconductors; heavily doped semiconductors; silicon; Si; band tails; diffusion/mobility ratio; energy band distortions; heavily doped; n-type; semiconductor; transport coefficients; Character generation; Electron devices; Gallium arsenide; Impurities; Optical distortion; Photonic band gap; Physics; Probability distribution; Silicon; Tail;
Journal_Title :
Electron Devices, IEEE Transactions on
