Title :
High-Power Single-Mode Submonolayer Quantum-Dot Photonic Crystal Vertical-Cavity Surface-Emitting Lasers
Author :
Lai, Fang-I ; Yang, H. P D ; Lin, G. ; Hsu, I. Chen ; Liu, Jui-Nung ; Maleev, N.A. ; Blokhin, S.A. ; Kuo, H.C. ; Chi, Jim Y.
Author_Institution :
Yuan Ze Univ., Taoyuan
Abstract :
A high-power, wide operation-range single-fundamental-mode InGaAs submonolayer (SML) quantum dot (QD) photonic crystal vertical-cavity surface-emitting laser (VCSEL) for fiber-optic applications was demonstrated. Single-fundamental-mode with a threshold current (Ith) of 0.9 mA and maximum continue-wave (CW) output power of 3.8 mW at 28 mA has been achieved in the 990 nm range. A side-mode suppression ratio (SMSR) larger than 35 dB has been observed over the entire current operating range. The far field measurement shows that the beam divergence angle remains very small and almost unchanged between 6.7-6.9deg, with the operation range increasing from 3 to 20 mA.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photonic crystals; quantum dot lasers; surface emitting lasers; wide band gap semiconductors; InGaAs; current 28 mA; current 3 mA to 20 mA; divergence angle; fiber-optic application; high-power laser; photonic crystal vertical-cavity surface-emitting laser; power 3.8 mW; single-mode laser; submonolayer quantum-dot laser; wavelength 990 nm; wide operation-range; Apertures; Fiber lasers; Indium gallium arsenide; Optical fiber polarization; Photonic crystals; Power generation; Quantum dot lasers; Quantum dots; Surface emitting lasers; Vertical cavity surface emitting lasers; Divergence angle; quantum-dot; single-mode; submonolayer (SML); vertical-cavity surface-emitting laser (VCSEL);
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2007.906352
