High-Speed 985 nm Bottom-Emitting VCSEL Arrays for Chip-to-Chip Parallel Optical Interconnects

Author

Lin, Chao-Kun ; Tandon, Ashish ; Djordjev, Kostadin ; Corzine, Scott W. ; Tan, Michael R T

Author_Institution

Bridgelux Inc., Sunnyvale

Volume

13

Issue

5

fYear

2007

Firstpage

1332

Lastpage

1339

Abstract

For chip-scale interconnection, 4 times 12 vertical-cavity surface-emitting laser (VCSEL) arrays have been optimized. Each flip-chip bondable bottom-emitting oxide-confined 985 nm VCSEL have integrated backside lenses, and is capable of modulation at >20 Gb/s with a low current density of only 9.9 kA/cm². An aggregate data rate of 960 Gb/s was obtained from a chip area of only 1.4 mm times 3.75 mm, or 18.3 Tb/(sldrcm²).

Keywords

integrated optoelectronics; optical interconnections; semiconductor lasers; surface emitting lasers; AlGaAs - Interface; bit rate 960 Gbit/s; bottom-emitting VCSEL array; chip to chip parallel optical interconnects; flip-chip bondable bottom emitting oxide; oxide confinement; semiconductor lasers; vertical-cavity surface-emitting laser; wavelength 985 nm; Aggregates; Bandwidth; Bonding; Frequency; Optical arrays; Optical interconnections; Semiconductor laser arrays; Surface emitting lasers; Thermal resistance; Vertical cavity surface emitting lasers; AlGaAs oxide confinement; arrays; high-speed vertical-cavity surface-emitting lasers (VCSELs); optical interconnects; semiconductor lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2007.906794

Filename

4346493