Title :
Low/high-profile TRAPATT structure
Author_Institution :
General Electric Company, Syracuse, USA
Abstract :
The letter investigates methods of reducing the threshold current density for long pulse operation, while maintaining high power and efficiency.
Keywords :
avalanche diodes; transit time devices; TRAPATT devices; avalanche diodes; long pulse operation; threshold current density; transit time devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740318
