Title :
Performance and Design of Microwave FET Harmonic Generators
Author :
Gupta, Madhu S. ; Laton, Richard W. ; Lee, Timothy T.
fDate :
3/1/1981 12:00:00 AM
Abstract :
Experimental measurements of the power gain of a 4- to 8-GHz frequency doubler, employing a single-gate GaAs MESFET device and a microstrip circuit, are reported. The measured performance provides design guidelines, and is explained in terms of FET characteristics. In particular, the multiplication gain is largest when the FET is biased near pinchoff.
Keywords :
Frequency measurement; Gain measurement; Gallium arsenide; Guidelines; MESFET circuits; Microstrip; Microwave FETs; Microwave devices; Microwave generation; Power measurement;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1981.1130338
