DocumentCode :
926159
Title :
25-W 915-nm Lasers With Window Structure Fabricated by Impurity-Free Vacancy Disordering (IFVD)
Author :
Taniguchi, Hidehiro ; Ishii, Hirotatsu ; Minato, Ryuichiro ; Ohki, Yutaka ; Namegaya, Takeshi ; Kasukawa, Akihiko
Author_Institution :
Furukawa Electr. Co. Ltd., Chiba
Volume :
13
Issue :
5
fYear :
2007
Firstpage :
1176
Lastpage :
1179
Abstract :
We have demonstrated high-performance broad-area single-emitter lasers with window structure fabricated by newly developed impurity-free vacancy disordering (IFVD) technique. A very high pulse output power of 25 W was obtained in 100-m wide lasers without facet degradation.
Keywords :
laser beams; laser mirrors; optical fabrication; semiconductor lasers; semiconductor technology; broad area laser; catastrophic optical mirror damage; impurity free vacancy disordering; power 25 W; semiconductor lasers; single emitter laser; wavelength 915 nm; window structure; Absorption; Degradation; Heating; Optical feedback; Photonic band gap; Power generation; Power lasers; Quantum well lasers; Semiconductor lasers; Temperature; Catastrophic optical mirror damage (COMD); high power; impurity-free vacancy disordering (IFVD); semiconductor lasers;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2007.903373
Filename :
4346525
Link To Document :
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