DocumentCode
926167
Title
Large-Signal Technique for Designing Single-Frequency and Voltage-Controlled GaAs FET Oscillators
Author
Rauscher, Christen
Volume
29
Issue
4
fYear
1981
fDate
4/1/1981 12:00:00 AM
Firstpage
293
Lastpage
304
Abstract
A systematic procedure is described for designing fixed-frequency and voltage-tuned GaAs FET oscillators for optimum large-signal performance. The approach is based on the use of a large-signal FET model for de-embedding dominant device nonlinearities, leading to a method which is both accurate and simple to apply. The viability of the technique is demonstrated with a 17-GHz fixed-frequency oscillator and a 7.4 to 13.1-GHz varactor-tuned oscillator. Design considerations as well measured performance characteristics are discussed in detail.
Keywords
Gallium arsenide; Impedance; Microwave FETs; Microwave devices; Microwave oscillators; Power generation; Radio frequency; Scattering parameters; Tunable circuits and devices; Voltage-controlled oscillators;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1981.1130347
Filename
1130347
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