DocumentCode :
926427
Title :
Transistor Electronics: Imperfections, Unipolar and Analog Transistors
Author :
Shockley, W.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N.J.
Volume :
40
Issue :
11
fYear :
1952
Firstpage :
1289
Lastpage :
1313
Abstract :
The electronic mechanisms that are of chief interest in transistor electronics are discussed from the point of view of solid-state physics. The important concepts of holes, electrons, donors, acceptors, and deathnium (recomibination center for holes and electrons) are treated from a unified viewpoint as imperfections in a nearly perfect crystal. The behavior of an excess electron as a negative particle moving with random thermal motion and drifting in an electric field is described in detail. A hole is similar to an electron in all regards save sign of charge. Some fundamental experiments have been performed with transistor techniques and exhibit clearly the behavior of holes and electrons. The interactions of holes, electrons, donors, acceptors, and deathnium give rise to the properties of p-n junctions, p-n junction transistors, and Zener diodes. Point-contact transistors are not understood as well from a fundamental viewpoint. A new class of unipolar transistors is discussed. Of these, the analog transistor is described in terms of analogy to a vacuum tube.
Keywords :
Bonding; Charge carrier processes; Chemicals; Crystals; Electrons; Germanium; P-n junctions; Physics; Silicon; Transistors;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1952.273954
Filename :
4050826
Link To Document :
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