• DocumentCode
    926545
  • Title

    Contact discontinuities and shock waves in active semiconductor devices

  • Author

    Freire, Gabriel F.

  • Author_Institution
    Instituto Tecnólogico de Aeronáutica, São José dos Campos, São Paulo, Brazil
  • Volume
    61
  • Issue
    4
  • fYear
    1973
  • fDate
    4/1/1973 12:00:00 AM
  • Firstpage
    508
  • Lastpage
    509
  • Abstract
    The generalized Rankine-Hugoniot relations resulting from the charge conservation law are applied to describe the essential features of contact discontinuities which occur in semiconductor exhibiting negative differential mobility and also the avalanche shock waves in the TRAPATT mode of operation of avalanche diodes.
  • Keywords
    Books; Chemicals; Error correction; Integral equations; Notice of Violation; Semiconductor devices; Semiconductor diodes; Semiconductor materials; Shock waves; Testing;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1973.9100
  • Filename
    1451030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=926545