Title :
Contact discontinuities and shock waves in active semiconductor devices
Author :
Freire, Gabriel F.
Author_Institution :
Instituto Tecnólogico de Aeronáutica, São José dos Campos, São Paulo, Brazil
fDate :
4/1/1973 12:00:00 AM
Abstract :
The generalized Rankine-Hugoniot relations resulting from the charge conservation law are applied to describe the essential features of contact discontinuities which occur in semiconductor exhibiting negative differential mobility and also the avalanche shock waves in the TRAPATT mode of operation of avalanche diodes.
Keywords :
Books; Chemicals; Error correction; Integral equations; Notice of Violation; Semiconductor devices; Semiconductor diodes; Semiconductor materials; Shock waves; Testing;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1973.9100
