DocumentCode :
926553
Title :
Improved method of anodic oxidation of GaAs
Author :
Hasegawa, H. ; Forward, K.E. ; Hartnagel, H.
Author_Institution :
University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
Volume :
11
Issue :
3
fYear :
1975
Firstpage :
53
Lastpage :
54
Abstract :
A new and better electrolyte for anodic oxidation of GaAs is described. It is an aqueous solution of tartaric or citric acid mixed with glycol and can produce, in an extremely stable manner, native oxide films with remarkably improved dielectric properties.
Keywords :
III-V semiconductors; gallium arsenide; oxidation; GaAs; anodic oxidation; native oxide films;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19750041
Filename :
4236549
Link To Document :
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