DocumentCode :
926594
Title :
Properties of the M-1740 P-N Junction Photocell
Author :
Shive, John N.
Author_Institution :
Bell Telephone Laboratories, Murray Hill, N.J.
Volume :
40
Issue :
11
fYear :
1952
Firstpage :
1410
Lastpage :
1413
Abstract :
The p-n junction photocell has a sensitivity of 30 ma per lumen for light of 2,400 degrees K color temperature, corresponding to a quantum yield approximately unity in the spectral range from visible to the long wave cutoff at 1.8 microns. Dark currents of e few microamperes are observed at room temperature, with a temperature coefficient of about + 10 per cent per degree C. Both dark and light currents exhibit saturation in the range from 1 to 90 volts applied. The frequency response is flat into the 100-kc region. Short-circuit noise currents are observed around 20 ¿¿a a in a 1-cps band at 1,000 cps. The photocell element is encapsulated in a plastic housing ¿ × 3/16 × ¿ inch in dimensions.
Keywords :
Germanium; Optical noise; P-n junctions; Photovoltaic systems; Plastics; Semiconductor device noise; Solar power generation; Sparks; Temperature distribution; Temperature sensors;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1952.273971
Filename :
4050843
Link To Document :
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