Title :
Circuit model for the GaAs m.e.s.f.e.t. valid to 12 GHz
Author :
Vendelin, G.D. ; Omori, Mutsumi
Author_Institution :
Varin Associates, Palo Alto, USA
Abstract :
A new equivalent circuit is given for the GaAs m.e.s.f.e.t., which includes resistive loss in the feed back elements. The circuit values are given for several 1 ¿m-gate GaAs m.e.s.f.e.t.s. A method for fitting s12 to the measured data is described. Finally, the gain and stability factor of several GaAs m.e.s.f.e.t.s. are extrapolated to 24 GHz from the present model.
Keywords :
equivalent circuits; field effect transistors; semiconductor device models; solid-state microwave devices; GaAs MESFET; circuit model; equivalent circuit; feedback elements; gain; resistive loss; stability factor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750046
