Title :
High voltage sensitivity GaAs planar doped barrier diodes for microwave/millimetre-wave zero-bias power detector applications
Author :
Vo, V.T. ; Hu, Z.R. ; Koon, K.L. ; Dharmasiri, C.N. ; Subramaniam, S.C. ; Rezazadeh, Ali A.
Author_Institution :
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
fDate :
3/4/2004 12:00:00 AM
Abstract :
GaAs planar doped barrier zero-bias detector diodes with voltage sensitivities of as high as 17 mV/μW at 10 GHz and 29 mV/μW at 35 GHz have been successfully designed, fabricated and tested. In comparison with existing devices, these sensitivities are 3-10 times higher, implying that the diodes can detect much lower RF power.
Keywords :
III-V semiconductors; gallium arsenide; microwave detectors; microwave diodes; millimetre wave detectors; millimetre wave diodes; sensitivity; vapour deposited coatings; 10 GHz; 35 GHz; GaAS planar doped barrier diode; GaAs; RF power; microwave-wave zero-bias power detector; millimeter-wave zero-bias power detector; voltage sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040217
