Title :
Method for measuring source resistance Rs in saturation region of GaN HEMT device over bias conditions (Vgs,Vds)
Author_Institution :
De Montfort Univ., Leicester, UK
fDate :
3/4/2004 12:00:00 AM
Abstract :
To accurately model distortion effects using a large signal model the variation of all the elements of the equivalent circuit model under bias conditions are required. A technique is presented to extract the source resistance Rs under bias conditions for the aluminium gallium nitride/gallium nitride (AlGaN/GaN) HEMT. The source resistance Rs is found to decrease as Vgs is increased, implying that the conduction channel becomes wider, which indicates a parallel conduction path to the 2D electron-gas.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; distortion; electric resistance measurement; equivalent circuits; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; 2D electron-gas; AlGaN-GaN; GaN HEMT device; aluminium gallium nitride/gallium nitride; bias conditions; distortion effects; equivalent circuit model; large signal model; parallel conduction path; saturation region; source resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040236
