Title :
Temperature dependence of the velocity/field characteristic of electrons in InP
Author :
Fawcett, W. ; Hill, G.
Author_Institution :
Royal Radar Establishment, Great Malvern, UK
Abstract :
Previous calculations of the velocity/field characterisitcs of electrons in indium phosphide at room temperature have been extended to cover the temperature range 200¿500 K. Preliminary results for the diffusion coefficients are presented.
Keywords :
III-V semiconductors; electrical conductivity of solid semiconductors and insulators; high field effects; indium compounds; InP; diffusion coefficients; electrons; high field effects; temperature dependence; velocity/field characteristic;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750060
