DocumentCode :
926780
Title :
Dynamics of Transistor Negative-Resistance Circuits
Author :
Farley, B.G.
Author_Institution :
Bell Telephone Laboratories, Murray Hill Laboratory, Murray Hill, N.J.
Volume :
40
Issue :
11
fYear :
1952
Firstpage :
1497
Lastpage :
1508
Abstract :
A general method is presented for calculating approximately the behavior of many nonlinear circuits by dividing the region of operation into subregions, within each of which the circuit may be considered linear to a good approximation. The method is applied to a high-speed transistor switching circuit as an illustrative example.
Keywords :
Circuit analysis; Control systems; Genetic expression; Impedance; Laboratories; Linear circuits; Nonlinear circuits; Pulse circuits; Switching circuits; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1952.273988
Filename :
4050860
Link To Document :
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