• DocumentCode
    926802
  • Title

    Power Rectifiers and Transistors

  • Author

    Hall, R.N.

  • Author_Institution
    General Electric Research Laboratory, Schenectady, N.Y.
  • Volume
    40
  • Issue
    11
  • fYear
    1952
  • Firstpage
    1512
  • Lastpage
    1518
  • Abstract
    The behavior of donor, acceptor, and ohmic contacts prepared by fusing impurity metals to germanium is discussed. Power rectifiers having rectification ratios as high as 107 can be made by fusing donor and acceptor contacts to opposite surfaces of a germanium wafer. An analysis of their electrical characteristics is presented which agrees well with the measured performance. The properties of transistors prepared in a similar manner and which are capable of 100 watts of output power are described.
  • Keywords
    Atomic measurements; Electric variables; Electrodes; Germanium; Impurities; Ohmic contacts; P-n junctions; Performance analysis; Power generation; Rectifiers;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1952.273990
  • Filename
    4050862
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=926802