• DocumentCode
    926829
  • Title

    Low-frequency noise of ion-implanted double-drift IMPATT diodes

  • Author

    Lee, D.H.

  • Volume
    61
  • Issue
    5
  • fYear
    1973
  • fDate
    5/1/1973 12:00:00 AM
  • Firstpage
    666
  • Lastpage
    667
  • Abstract
    The low-frequency open circuit noise spectral density S(f) of an ion-implanted 60-GHz double-drift-region IMPATT diode was measured as a function of the dc avalanche current I0. Over an intermediate current range the noise follows an S(f)=a2VB02/I0relationship where VB0is the reverse breakdown voltage and a2≃4.5 × 10-20A/Hz.
  • Keywords
    Band pass filters; Charge carrier processes; Diodes; Electric breakdown; Fabrication; Frequency; Impedance; Low-frequency noise; Noise level; Silicon;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1973.9127
  • Filename
    1451057
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=926829