• DocumentCode
    926885
  • Title

    Velocity/field characteristic of n-type indium phosphide at 110 and 330 K

  • Author

    Tebbenham, R.L. ; Walsh, Declan

  • Author_Institution
    Oxford University, Department of Engineering Science, Oxford, UK
  • Volume
    11
  • Issue
    5
  • fYear
    1975
  • Firstpage
    96
  • Lastpage
    97
  • Abstract
    The technique of microwave conductivity measurement was employed to investigate the velocity/field characteristic of epitaxially grown indium phosphide. Cooling the material from 330 to 110 K produced a 10% decrease in threshold field and a 70% increase in peak velocity. Measurements of variation of power absorption with epitaxial layer thickness are also reported.
  • Keywords
    III-V semiconductors; electrical conductivity of solid semiconductors and insulators; high field effects; indium compounds; 110K; epitaxial layer thickness; microwave conductivity measurement; n-InP; power absorption; threshold field; velocity/field characteristic;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750073
  • Filename
    4236583
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=926885